SiC semiconductor device and method of manufacturing the same

ABSTRACT

A method of manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) by using a single mask, etching regions of an SiC semiconductor layer which serve as an impurities implantation region and a mark region, to form recesses, (b) by using the same mask as in the step (a), performing ion-implantation in the recesses of the regions which serve as the impurities implantation region and the mark region, at least from an oblique direction relative to a surface of the SiC semiconductor layer and (c) positioning another mask based on the recess of the region which serves as the impurities implantation region or the mark region, and performing well implantation in a region containing the impurities implantation region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. application Ser. No. 12/911,304,filed Oct. 25, 2010, the entire contents of which is incorporated hereinby reference. U.S. application Ser. No. 12/911,304 claims the benefit ofpriority under 35 U.S.C. §119 from Japanese Patent Application No.2010-026062 filed Feb. 9, 2010.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device having a markregion and a source region, and particularly an SiC semiconductor deviceusing silicon carbide, and a method of manufacturing the same.

2. Description of the Background Art

The breakdown electric field and the bandgap of silicon carbide areapproximately ten times and three times greater than those of silicon,respectively. Accordingly, a power device using silicon carbide canoperate at a higher temperature with a low resistance, as compared witha power device using silicon which is currently used. Particularly, aMOSFET and an IGBT using silicon carbide are quite prospective because asmall loss occurs in a normal mode and at a time of switching, whencompared with a MOSFET and an IGBT using silicon with the same breakdownvoltage. Thus, various methods of manufacturing a MOSFET and an IGBTusing silicon carbide have been proposed (for example, see JapanesePatent Application Laid-Open No. 2000-164525).

In the MOSFET using silicon carbide, a channel resistance accounts for ahalf of the on-resistance involved in a loss occurring at a time whencurrent flows. The channel resistance is determined by a channel lengthLch which depends on a positional relationship between a p-well regionand a source region as shown in FIG. 1. If the channel length Lch variesdue to mask misalignment occurring in a step of forming the p-wellregion and the source region, a chip may be broken by local currentconcentration in a chip face. Accordingly, how the channel length Lchcan be accurately controlled is a significant problem.

In a conventional process of manufacturing a MOSFET using siliconcarbide, at the beginning of a wafer process, a mark region is formedwhich serves as a reference for a mask alignment in a photomechanicalprocess. Then, the mask alignment is performed based on the mark region,to form a p-well region. Moreover, the mask alignment is performed byusing the mark region as a reference, to form an n-type source region.Furthermore, a well contact region is formed at the center of the sourceregion. Then, in the same manner, the mask alignment is performed basedon the mark region, to form an electrode structure.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a structure of asemiconductor device which suppresses a variation in a channel length,and a method of manufacturing the same.

An SiC semiconductor device according to the present invention includesan SiC semiconductor layer, a well region selectively formed on asurface of the SiC semiconductor layer, and an impurities implantationregion selectively formed on a surface of the well region. Theimpurities implantation region has a recess formed in a region thereofexcept a region near an end portion on a surface of the impuritiesimplantation region, and the region near the end portion has a hook-likeshape curving toward an upper face of the semiconductor layer.

Since the region near the end portion of the impurities implantationregion has a hook-like shape curving toward the upper face of thesemiconductor layer, an inversion layer can be uniformly formed on awafer surface.

A method of manufacturing an SiC semiconductor device according to thepresent invention includes the steps of (a) by using a single mask,etching regions of an SiC semiconductor layer which serve as animpurities implantation region and a mark region, to form recesses, (b)by using the single mask, performing ion-implantation in the recesses ofthe regions which serve as the impurities implantation region and themark region, at least from an oblique direction relative to a surface ofthe SiC semiconductor layer, and (c) positioning another mask based onthe recess of the region which serves as the impurities implantationregion or the mark region, and performing well implantation in a regioncontaining the impurities implantation region.

Since the etching for the impurities implantation region and the markregion is performed by using the single mask, the impuritiesimplantation region can be formed without any misalignment relative tothe mark region, and therefore a variation in a channel length can besuppressed. Moreover, by performing the ion-implantation from theoblique direction, the impurities implantation region can be formed alsonear the side face of the recess. Therefore, an inversion layer can beuniformly formed on a wafer surface.

A method of manufacturing an SiC semiconductor device according to thepresent invention includes the steps of (a) by using a single mask,performing ion-implantation in regions of an SiC semiconductor layerwhich serve as an impurities implantation region and a mark region, atleast from an oblique direction relative to a surface of the SiCsemiconductor layer, (b) by using the single mask, performing etching topartially remove ion-implanted regions of the regions which serve as theimpurities implantation region and the mark region, to form recesses,and (c) positioning another mask based on the recess of the region whichserves as the impurities implantation region or the mark region, andperforming well implantation in a region containing the impuritiesimplantation region.

Since the etching for the impurities implantation region and the markregion is performed by using the single mask, the impuritiesimplantation region can be formed without any misalignment relative tothe mark region, and therefore a variation in a channel length can besuppressed. Moreover, by performing the ion-implantation from theoblique direction, the impurities implantation region can be formed alsonear the side face of the recess. Therefore, an inversion layer can beuniformly formed on a wafer surface. Additionally, since the etching isperformed after the ion-implantation is performed in the formation ofthe impurities implantation region, the impurities implantation regionis not influenced by the etching and can be formed without a variation.

A method of manufacturing an SiC semiconductor device according to thepresent invention includes the steps of (a) by using a single maskhaving a low selectivity relative to an SiC semiconductor layer, etchingregions of the SiC semiconductor layer which serve as an impuritiesimplantation region and a mark region, to form recesses, (b) by usingthe single mask, performing ion-implantation in the recesses of theregions which serve as the impurities implantation region and the markregion, and (c) positioning another mask based on the recess of theregion which serves as the impurities implantation region or the markregion, and performing well implantation in a region containing theimpurities implantation region.

Since the etching is performed by using the mask having a lowselectivity relative to the SiC semiconductor layer, the opening of themask is formed into a tapered shape. Therefore, the thickness of themask is small in a region near a boundary of the opening. Ions are,through the mask, implanted also in a portion of the SiC semiconductorlayer located immediately below the region. Therefore, the impuritiesimplantation region can be stably formed near a side face of the recess,to enable an inversion layer to be uniformly formed on the wafersurface. Furthermore, the end portion of the impurities implantationregion is formed into a tapered shape, and therefore there is nosteeply-angled portion. Thus, breakdown caused by electric fieldconcentration can be prevented.

A method of manufacturing an SiC semiconductor device according to thepresent invention includes the steps of (a) by using a single maskhaving a tapered-shaped opening, performing ion-implantation in regionsof an SiC semiconductor layer which serve as an impurities implantationregion and a mark region, (b) by using the single mask, performingetching to partially remove ion-implanted regions of the regions whichserve as the impurities implantation region and the mark region, to formrecesses, and (c) positioning another mask based on the recess of theregion which serves as the impurities implantation region or the markregion, and performing well implantation in a region containing theimpurities implantation region.

Since the opening of the mask has a tapered shape, the thickness of themask is small in a region near a boundary of the opening. Ions are,through the mask, implanted also in a portion of the SiC semiconductorlayer located immediately below the region. Therefore, the impuritiesimplantation region can be stably formed near a side face of the recess,to enable an inversion layer to be uniformly formed on the wafersurface. Furthermore, the end portion of the impurities implantationregion is formed into a tapered shape, and therefore there is nosteeply-angled portion. Thus, breakdown caused by electric fieldconcentration can be prevented. Additionally, since the etching isperformed after the ion-implantation is performed in the formation ofthe impurities implantation region, the impurities implantation regionis not influenced by the etching and can be formed without a variation.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view showing a structure of an SiC semiconductordevice;

FIG. 2 is a sectional view showing a process of manufacturing an SiCsemiconductor device according to a background technique;

FIG. 3 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the background technique;

FIG. 4 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the background technique;

FIG. 5 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the background technique;

FIG. 6 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the background technique;

FIG. 7 is a sectional view showing a process of manufacturing an SiCsemiconductor device according to the present invention;

FIG. 8 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 9 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 10 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 11 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 12 is a sectional view showing a process of manufacturing an SiCsemiconductor device according to the present invention;

FIG. 13 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 14 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 15 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 16 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 17 is a sectional view showing a process of manufacturing an SiCsemiconductor device according to the present invention;

FIG. 18 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 19 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 20 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 21 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 22 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 23 is a sectional view showing a process of manufacturing an SiCsemiconductor device according to the present invention;

FIG. 24 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 25 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 26 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 27 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 28 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 29 is a sectional view showing a process of manufacturing an SiCsemiconductor device according to the present invention;

FIG. 30 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 31 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 32 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 33 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 34 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 35 is a sectional view showing a process of manufacturing an SiCsemiconductor device according to the present invention;

FIG. 36 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 37 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 38 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention;

FIG. 39 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention; and

FIG. 40 is a sectional view showing the process of manufacturing the SiCsemiconductor device according to the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Background Technique

As a background technique of the present invention, a process ofmanufacturing a MOSFET shown in FIG. 1 will be described along stepsshown in FIGS. 2 to 6.

Firstly, by using a mask 20, a wafer having an n−SiC epi (epitaxial)layer 2 formed on an n+SiC substrate 1 is etched to form a mark region(FIG. 2). Then, a mask 21 is formed based on the mark region, and Al isimplanted, to form a p-well region 4 (FIG. 3). Additionally, a mask 22is formed based on the mark region, and N ions are implanted, to form ann-type source region 3 (FIG. 4). In the same manner, a mask 23 is formedbased on the mark region, and Al ions are implanted, to form a wellcontact region 5 at the center of the source region 3 (FIG. 5).Subsequently, in the same manner, a mask alignment is performed based onthe mark region, to form an electrode structure (FIG. 6). In theelectrode structure, the reference numerals 6, 7, 8, 9, 10, and 11represent a Ni film, a gate oxide film, a poly-Si, an interlayerinsulating film, an Al film, and a drain electrode, respectively.

If the mask alignments are performed based on the etched portion of themark region when the source region 3 and the p-well region 4 are formedas described above, a mask misalignment in each step is repeated, tocause a large variation in a channel length Lch (see FIG. 1).

Therefore, in a process of manufacturing a MOSFET which is an SiCsemiconductor device according to the present invention, a mark regionand a source region 3 are etched by using the single mask, andsubsequent mask alignments are performed based on an etched portion ofthe mark region or the source region 3 (since the amount of maskmisalignment between the mark region and the source region 3 is zero,either the mark region or the source region 3 can serve as a reference).In this manner, a variation in the channel length Lch is suppressed.

Preferred Embodiment 1

If the mark region and the source region 3 are simultaneously formed byperforming etching and ion implantation by using a single mask, anetched portion of the source region 3 is formed without any misalignmentfrom the reference mark region. If, in subsequent source forming steps,a mask alignment is performed by using the etched portion of the markregion or the source region 3, a variation in the channel length Lch canbe suppressed because the source region 3 is formed without anymisalignment from the mark region.

Along the procedure shown in FIGS. 7 to 11, a description will be givenof an exemplary process of manufacturing a MOSFET in which etching andion implantation for forming the mark region and the source region 3 aresimultaneously performed. Firstly, by using a single mask 30, etchingfor the source region 3 and the mark region is performed on an SiCsemiconductor layer including an n+SiC substrate 1 and an n−SiC epilayer 2 formed on the n+SiC substrate 1, and thereby recesses (having adepth of 0.2 μm) are formed (FIG. 7). Each of the mask 30, and masks 31and 32 which will be described later, are made of a resist mask or ahard mask such as an oxide film or a nitride film.

Then, by using the same single mask 30 again, N (nitrogen) or P(phosphorus) are vertically ion-implanted with an implantation amount of3×10¹⁹ cm⁻³, to thereby form an n-type source region 3 (having a depthof 0.4 μm) (FIG. 8).

Then, Al (aluminum) or B (boron) are ion-implanted by using a p-wellimplantation mask 31 which is aligned based on the recess of the markregion or the source region 3, to form a p-well region 4 (having a depthof 1.0 μm) (FIG. 9). At this time, the recess is formed in the sourceregion 3, and therefore a part of the p-well region 4 formed immediatelyunder the source region 3 corresponds to the amount of level differencecaused by the recess. In this manner, since the p-well region 4 has anumbilicus-shaped structure, the breakdown strength can be improved.

Subsequently, by using a well contact implantation mask 32 aligned basedon the recess of the mark region or the source region 3, Al or B areion-implanted, to form a well contact region 5 at the center of thesource region 3 (FIG. 10). The Al or the B are ion-implanted at a higherconcentration, as compared with the amount in the p-well implantation orthe source implantation. Here, for the first time, the complete sourceregion 3 is formed.

In the following, although a detailed description is omitted, hightemperature activation annealing is performed, and the gate oxide film7, the poly-Si gate electrode 8, the interlayer insulating film 9, thesource electrodes 6, 10, the drain electrode 11, and the like, aresequentially formed, so that a MOSFET shown in FIG. 11 is completed.Here, the drain electrode 11 may be formed of Ni for example, oralternatively a multi-layer metal.

By simultaneously etching regions where the mark region and the sourceregion 3 are to be formed, the number of steps can be reduced and themanufacturing process can be simplified, as compared with when the markregion and the source region 3 are separately formed. As a result, awork period can be shortened, and costs can be reduced. Moreover, bysimultaneously forming the mark region and the source region 3, a maskmisalignment of the source region 3 relative to a mark reference neednot be considered, and a positioning accuracy of the source region 3relative to the well region 4 is greatly improved. This can suppress avariation in the channel length Lch to a minimum level, and the qualityof a chip can be improved because the chip can be prevented from beingbroken by current concentration which is caused by a variation in theon-resistance.

In the manufacturing process shown in FIGS. 7 to 11, the etching for themark region and the source region 3 is firstly performed (FIG. 7), andthen the ion implantation is performed (FIG. 8). However, there is apossibility that the shape of a resist pattern changes due to theetching, to cause the source region 3 to vary in the subsequention-implantation step. To prevent this problem, it is desirable toperform the etching after performing the ion implantation, as shown inFIGS. 12 to 16.

Firstly, in a semiconductor layer including the n+SiC substrate 1 and ann−SiC epi layer 2 formed on the n+SiC substrate 1, N or P are verticallyion-implanted in regions where the source region 3 and the mark regionare to be formed, by using the single mask 30 (FIG. 12). Additionally,etching is performed by using the same mask 30 again, to form a recess(FIG. 13).

Then, similarly to the process described with reference to FIGS. 7 to11, the p-well region 4 (FIG. 14) and the well contact region 5 (FIG.15) are formed based on the recess of the mark region or the sourceregion 3. Moreover, high temperature activation annealing is performed,and the gate oxide film 7, the poly-Si gate electrode 8, the interlayerinsulating film 9, the source electrode 6, the drain electrode 11, andthe like, are sequentially formed. Thus, a MOSFET shown in FIG. 16 iscompleted.

In this manufacturing process, the etching for the source region 3 isperformed after the ion-implantation. This can prevent the source region3 from varying due to a change of the shape of the resist pattern whichis caused by the etching. However, in the ion-implantation step, a deepimplantation has to be performed in advance in consideration of a depthof the etching.

<Angled Implantation>

However, when a MOSFET is formed by using SiC as a material through theprocess shown in FIGS. 7 to 11 or the process shown in FIGS. 12 to 16,the following problem arises. In SiC, unlike Si, an implanted elementhardly diffuses in a lateral direction. Therefore, in theion-implantation step shown in FIG. 8 and FIG. 12, the source region 3does not spread in the lateral direction from an opening of the mask 30,but is formed immediately downward. On the other hand, since the sourceregion 3 is formed simultaneously with the mark region, a wafer surfaceis etched and an upper face of the source region 3 forms a recess.Accordingly, in the subsequent step, the gate oxide film is formed notonly on the wafer surface but also on a side face of the recess (in across-sectional direction of the wafer), as shown in FIG. 11 and FIG.16.

SiC has a hexagonal crystalline structure. A speed of oxidizationdiffers between in a wafer surface ((0001) face) direction and in across-sectional direction. For example, when the wafer cross-sectionaldirection is a (11-20) face, the gate oxide film 7 in thecross-sectional direction is several times thicker than that in thesurface direction (although FIGS. 11 and 16 show that the gate oxidefilm 7 in the cross-sectional direction is nearly twice thicker thanthat in the surface direction, it is actually still thicker). Thechannel is formed along the hook-shaped gate oxide film 7. Here, therehas been a problem that a channel resistance is unstable because thethickness of the gate oxide film 7 varies as described above.

Moreover, the gate oxide film 7 in the cross-sectional direction isinfluenced by an accuracy of the recess-etching process, and the filmthickness thereof varies due to the accuracy. If the gate oxide film 7is thick, an inversion layer is hardly formed. As a result, theformation of the inversion layer differs or varies between the wafersurface (a surface of the well region 4) and the side face of the recess(in the cross-sectional direction of the wafer).

To solve these problems, it is necessary to form the source region 3also in a portion of the SiC epi layer 2 at the side face of the recess,to thereby stably form the inversion layer only on the wafer surface. Anexample of such a manufacturing process is shown in FIGS. 17 to 22.FIGS. 17 to 22 show a manufacturing process in which an angledimplantation is performed in the ion-implantation step of themanufacturing process shown in FIGS. 7 to 11.

Firstly, similarly to the process shown in FIGS. 7 to 11, by using thesingle mask 30 in which a mark-portion opening and a source-portionopening are formed, etching is performed on a semiconductor layerincluding an n+SiC substrate 1 and an n−SiC epi layer 2 formed on then+SiC substrate 1, and thereby recesses (having a depth of 0.2 μm) ofthe mark region and the source region 3 are formed (FIG. 17). Here, aregion defined by a combination of the complete source region 3 and thewell contact region 5 formed in the source region 3 is formed so as tohave a recess shape. Each of the mask 30, and masks 31 and 32 which willbe described later, are made of a resist mask or a hard mask such as anoxide film or a nitride film.

Then, by using the same mask 30 again, N or P are verticallyion-implanted with an implantation amount of 3×10¹⁹ cm⁻³, to therebyform an n-type source region 3 (having a depth of 0.4 μm) (FIG. 18).Furthermore, the same ion-implantation is performed with rotation of thewafer, or performed obliquely at an angle of approximately 5 to 30°relative to the direction perpendicular to the wafer (FIG. 19). Thereby,the source region 3 can be also formed at a portion of the n−SiC epilayer 2 near the side face of the recess. Here, the step of FIG. 18 maybe omitted, and the ion-implantation may be formed obliquely or withrotation of the wafer, from the start.

Then, Al or B are ion-implanted by using the p-well implantation mask 31which is aligned based on the recess of the mark region or the sourceregion 3, to form a p-well region 4 (having a depth of 1.0 μm) (FIG.20). In a subsequent step, similarly to the step of FIG. 10, the wellcontact region 5 is formed by using the well contact implantation mask32 aligned based on the recess of the mark region or the source region 3(FIG. 21). Moreover, high temperature activation annealing is performed,and the gate oxide film 7, the poly-Si gate electrode 8, the interlayerinsulating film 9, the source electrode 6, the drain electrode 11, andthe like, are sequentially formed. Thus, a MOSFET shown in FIG. 22 iscompleted. The source region 3 has a recess formed in a region thereofexcept a region near the end on the surface of the source region 3, andthe region near the end has a hook shape curving toward an upper face ofthe SiC semiconductor layer. This enables the inversion layer to bestably formed on the wafer surface.

In this manner, the process of manufacturing the semiconductor device ofthis preferred embodiment includes the steps of (a) by using the singlemask, forming recesses by etching regions of the SiC semiconductor layerwhich serves as the source region 3 (impurities implantation region) andthe mark region, (b) by using the same mask as in the step (a),performing ion-implantation in the recesses which serve as the sourceregion 3 and the mark region, at least from an oblique directionrelative to the surface of the SiC semiconductor layer, and (c) aligninganother mask based on at least the recess which serves as the impuritiesimplantation region, and performing well implantation in a regioncontaining the impurities implantation region. By performing the etchingfor the source region 3 and the mark region by using the single mask,the source region 3 can be formed without any misalignment relative tothe mark region, and therefore a variation in the channel length can besuppressed. Moreover, by performing the ion-implantation from theoblique direction, the source region 3 can be formed also near the sideface of the recess, so that an oxide film is not formed at the side faceof the recess. Therefore, the inversion layer can be uniformly formed onthe wafer surface.

The semiconductor device of this preferred embodiment thus formed hasthe n+SiC substrate 1, the n−SiC epi layer 2 (SiC semiconductor layer),the p-well regions 4 selectively formed on the surface of the SiCsemiconductor layer, and the source regions 3 (impurities implantationregions) selectively formed on the surface of the p-well regions 4. Thesource region 3 has a recess formed in a region thereof except a regionnear the end on the surface of the source region 3, and the region nearthe end has a hook shape curving toward the upper face of thesemiconductor layer. This enables the inversion layer to be uniformlyformed on the wafer surface.

Also in the manufacturing process shown in FIGS. 12 to 16, the sameeffects can be obtained by performing angled implantation in theion-implantation step. FIGS. 23 to 28 show a manufacturing process inwhich the angled implantation is performed in the ion-implantation stepin the manufacturing process shown in FIGS. 12 to 16.

Firstly, similarly to the process shown in FIGS. 12 to 16, in asemiconductor layer including the n+SiC substrate 1 and an n−SiC epilayer 2 formed on the n+SiC substrate 1, N or P are verticallyion-implanted in regions where the source region 3 and the mark regionare to be formed, by using the single mask 30 (FIG. 23). Furthermore,the same ion-implantation is performed with rotation of the wafer, orperformed obliquely at an angle of approximately 5 to 30° relative tothe direction perpendicular to the wafer (FIG. 24).

Then, etching is performed by using the same mask 30 again, to form arecess (FIG. 25). Subsequently, similarly to the steps described withreference to FIGS. 14 and 15, the p-well region 4 (FIG. 26) and the wellcontact region 5 (FIG. 27) are formed based on the recess of the markregion or the source region 3. Moreover, high temperature activationannealing is performed, and the gate oxide film 7, the poly-Si gateelectrode 8, the interlayer insulating film 9, the source electrode 6,the drain electrode 11, and the like, are sequentially formed. Thus, aMOSFET shown in FIG. 28 is completed.

The process of manufacturing the semiconductor device of this preferredembodiment includes the steps of (a) performing ion-implantation inregions of the SiC semiconductor layer which serve as the source region3 (impurities implantation region) and the mark region, at least from anoblique direction relative to the surface of the SiC semiconductorlayer, (b) by using the same mask as in the step (a), performing etchingto partially remove the ion-implanted regions of the regions serving asthe source region 3 and the mark region, to thereby form recesses, and(c) positioning another mask based on the recess of the region servingas the source region 3 or the mark region, and performing the wellimplantation in a region containing the source region 3. By performingthe etching for the source region 3 and the mark region by using thesingle mask, the source region 3 can be formed without any misalignmentrelative to the mark region, and therefore a variation in the channellength can be suppressed. Moreover, by performing the ion-implantationfrom the oblique direction, the source region 3 is formed beyond theopening of the mask. When the recess is formed in the etching step, thesource region 3 is formed also near the side face of the recess.Therefore, the inversion layer can be uniformly formed on the wafersurface. Additionally, since the etching is performed after theion-implantation is performed in the source region 3, the source region3 is not influenced by the etching and formed without a variation.

<Tapered Shape>

FIGS. 29 to 34 show a process of manufacturing a MOSFET, in which a maskhaving a low selectivity relative to the SiC semiconductor layer (epilayer 2) is used in the etching step of FIG. 17. As shown in FIG. 29,when etching for the mark region and the source region 3 is performed onthe SiC semiconductor layer by using a mask 70 having a low selectivity,an opening of the mask 70 has a tapered shape. The etching rate ratio isset to be (mask/SiC semiconductor layer)≧1.

Then, by using the same mask 70 again, ion-implantation is performed inthe direction perpendicular to the wafer (FIG. 30). Since the mask 70 isformed into the tapered shape in the previous step, a portion of themask 70 near a boundary between the mask 70 and the opening has a smallthickness. Ions are, through the mask 70, implanted in a portion of theepi layer 2 located immediately below this portion of the mask 70. As aresult, without performing the angled implantation, the source region 3is stably formed near the side face of the recess, so that an endportion of the source region 3 has a tapered shape. This enables aninversion layer to be stably formed on the wafer surface.

However, angled implantation may be additionally performed to form thesource region 3 near the side face of the recess. In this case, theion-implantation is performed with rotation of the wafer, or performedobliquely at an angle of approximately 5 to 30° relative to thedirection perpendicular to the wafer (FIG. 31).

Subsequent steps are the same as shown in FIGS. 7 to 11, and the p-wellregion 4 and the well contact region 5 are formed (FIGS. 32 and 33).Moreover, high temperature activation annealing is performed, and thegate oxide film 7, the poly-Si gate electrode 8, the interlayerinsulating film 9, the source electrode 6, the drain electrode 11, andthe like, are sequentially formed. Thus, a MOSFET shown in FIG. 34 iscompleted.

FIGS. 35 to 40 show a manufacturing process in which a mask having atapered shape is used in the ion-implantation step of FIG. 23 includedin the MOSFET manufacturing process shown in FIGS. 23 to 28 in which theetching is performed after the source implantation. FIG. 35 shows a stepof performing ion-implantation by using a mask 70 provided withtapered-shaped openings due to post-baking. When N ions are implanted inthe direction perpendicular to the wafer, the ion-implantation is alsoperformed, through the mask 70, in a region located immediately below athinned portion of the mask 70 around the opening. As a result, withoutan angled implantation, the source region 3 is formed beyond the openingof the mask 70, and an end portion of the source region has a taperedshape.

However, an angled implantation may be additionally performed to formthe source region 3 beyond the opening of the mask 70. In this case, theion-implantation is performed with rotation of the wafer, or performedobliquely at an angle of approximately 5 to 30° relative to thedirection perpendicular to the wafer (FIG. 36).

Then, etching for the source region 3 is performed by using the samemask 70 again (FIG. 37). Thus, a recess is formed in the source region3. Since the source region 3 is formed beyond a region corresponding tothe opening of the mask 70, the source region 3 is formed near the sideface of the recess, too.

Subsequent steps are the same as shown in FIGS. 26 to 28, and the p-wellregion 4 and the well contact region 5 are formed (FIGS. 38 and 39).Moreover, high temperature activation annealing is performed, and thegate oxide film 7, the poly-Si gate electrode 8, the interlayerinsulating film 9, the source electrode 6, the drain electrode 11, andthe like, are sequentially formed. Thus, a MOSFET shown in FIG. 40 iscompleted. The source region 3 has a recess formed in a region thereofexcept a region near the end on the surface of the source region 3, andthe region near the end has a hook shape curving toward the upper faceof the semiconductor layer. This enables the inversion layer to bestably formed on the wafer surface.

Although the MOSFET has been described above, the IGBT differs fromMOSFET only in a structure at a back surface side of the substrate (in acase of the MOSFET, the drain side), and has the same structure as thatof the MOSFET in terms of a front surface side. Therefore, theabove-described manufacturing process is applicable to the IGBT, too,and exerts the effect that controllability of the channel length isimproved.

<Effect>

The semiconductor device of this preferred embodiment exerts thefollowing effects. The semiconductor device of this preferred embodimentthus formed has the n+SiC substrate 1, the n−SiC epi layer 2 (SiCsemiconductor layer), the p-well regions 4 selectively formed on thesurface of the SiC semiconductor layer, and the source regions 3(impurities implantation regions) selectively formed on the surface ofthe p-well regions 4. The impurities implantation region has a recessformed in a region thereof except a region near the end on the surfaceof the impurities implantation region, and the region near the end has ahook shape curving toward the upper face of the semiconductor layer.This enables the inversion layer to be uniformly formed on the wafersurface.

Additionally, the end portion of the impurities implantation region hasa tapered shape. This configuration also enables the inversion layer tobe uniformly formed on the wafer surface.

The first method of manufacturing the semiconductor device of thispreferred embodiment exerts the following effects. The first method ofmanufacturing the semiconductor device of this preferred embodimentincludes the steps of (a) by using a single mask, forming recesses byetching regions of the SiC semiconductor layer which serve as the sourceregion 3 (impurities implantation region) and the mark region, (b) byusing the same mask as in the step (a), performing ion-implantation inthe recesses which serve as the source region 3 and the mark region, atleast from an oblique direction relative to the surface of the SiCsemiconductor layer, and (c) aligning another mask based on the recessof the region which serves as the source region 3 or the mark region,and performing well implantation in a region containing the sourceregion 3. By performing the etching for the source region 3 and the markregion by using the single mask, the source region 3 can be formedwithout any misalignment relative to the mark region, and therefore avariation in the channel length can be suppressed. Moreover, byperforming the ion-implantation from the oblique direction, the sourceregion 3 can be formed also at the side face of the recess. Therefore,the inversion layer can be uniformly formed on the wafer surface.

The second method of manufacturing the semiconductor device of thispreferred embodiment includes the steps of (a) by using a single mask,performing ion-implantation in regions of the SiC semiconductor layerwhich serve as the source region 3 (impurities implantation region) andthe mark region, at least from an oblique direction relative to thesurface of the SiC semiconductor layer, (b) by using the same mask as inthe step (a), performing etching to partially remove the ion-implantedregions of the regions serving as the source region 3 and the markregion, to thereby form recesses, and (c) positioning another mask basedon the recess of the region serving as the source region 3 or the markregion, and performing the well implantation in a region containing thesource region 3. By performing the etching for the source region 3 andthe mark region by using the single mask, the source region 3 can beformed without any misalignment relative to the mark region, andtherefore a variation in the channel length can be suppressed. Moreover,by performing the ion-implantation from the oblique direction, thesource region 3 can be formed also at the side face of the recess, sothat the inversion layer can be uniformly formed on the wafer surface.Additionally, since the etching is performed after the ion-implantationis performed in the formation of the source region 3, the source region3 is not influenced by the etching and formed without a variation.

The third method of manufacturing the semiconductor device of thispreferred embodiment includes the steps of (a) by using a single maskhaving a low selectivity relative to the SiC semiconductor layer,forming recesses by etching regions of the SiC semiconductor layer whichserve as the impurities implantation region (source region 3) and themark region, (b) by using the same mask as in the step (a), performingion-implantation in the recesses which serve as the source region 3 andthe mark region, and (c) aligning another mask based on the recess ofthe region which serves as the source region 3 or the mark region, andperforming well implantation in a region containing the source region 3.Since the etching is performed by using the mask having a lowselectivity relative to the SiC semiconductor layer, the opening of themask 70 is formed into a tapered shape. Therefore, the thickness of themask 70 is small in a region near the boundary of the opening. Ions are,through the mask 70, implanted also in a portion of the SiCsemiconductor layer located immediately below the region. Therefore, thesource region 3 can be stably formed near the side face of the recess,to enable the inversion layer to be uniformly formed on the wafersurface. Furthermore, the end portion of the source region 3 is formedinto a tapered shape, and therefore there is no steeply-angled portion.Thus, breakdown caused by electric field concentration can be prevented.

Moreover, in the step (b), the ion-implantation is performed at leastfrom an oblique direction relative to the surface of the SiCsemiconductor layer. This enables the source region 3 to be stablyformed near the side face of the recess, so that the inversion layer canbe uniformly formed on the wafer surface.

The fourth method of manufacturing the semiconductor device of thispreferred embodiment includes the steps of (a) by using the single maskhaving tapered-shaped openings, performing ion-implantation in regionsof the SiC semiconductor layer which serve as the impuritiesimplantation region (source region 3) and the mark region, (b) by usingthe same mask as in the step (a), performing etching to partially removethe ion-implanted regions of the regions serving as the source region 3and the mark region, to thereby form recesses, and (c) positioninganother mask based on the recess of the region serving as the sourceregion 3 or the mark region, and performing the well implantation in aregion containing the source region 3. Since the opening of the mask 70is formed into a tapered shape, the thickness of the mask 70 is small ina region near the boundary of the opening. Ions are, through the mask70, implanted also in a portion of the SiC semiconductor layer locatedimmediately below the region. Therefore, the source region 3 can bestably formed near the side face of the recess, to enable the inversionlayer to be uniformly formed on the wafer surface. Furthermore, the endportion of the source region 3 is formed into a tapered shape, andtherefore there is no steeply-angled portion. Thus, breakdown caused byelectric field concentration can be prevented. Additionally, since theetching is performed after the ion-implantation is performed in theformation of the source region 3, the source region 3 is not influencedby the etching and formed without a variation.

Moreover, in the step (a), the ion-implantation is performed at leastfrom an oblique direction relative to the surface of the SiCsemiconductor layer. This enables the source region 3 to be stablyformed near the side face of the recess, so that the inversion layer canbe uniformly formed on the wafer surface.

While the invention has been shown and described in detail, theforegoing description is in all aspects illustrative and notrestrictive. It is therefore understood that numerous modifications andvariations can be devised without departing from the scope of theinvention.

What is claimed is:
 1. A method of manufacturing an SiC semiconductordevice, comprising the steps of: (a) etching regions of an SiCsemiconductor layer which serve as an impurities implantation region anda mark region, with a single mask, to form recesses; (b) performingion-implantation in the recesses of the regions which serve as saidimpurities implantation region and said mark region, with said singlemask, at least from an oblique direction relative to a surface of saidSiC semiconductor layer; and (c) positioning another mask based on therecess of the region which serves as said impurities implantation regionor said mark region, and performing well implantation in a regioncontaining said impurities implantation region.
 2. A method ofmanufacturing an SiC semiconductor device, comprising the steps of: (a)performing ion-implantation in regions of an SiC semiconductor layerwhich serve as an impurities implantation region and a mark region, witha single mask, at least from an oblique direction relative to a surfaceof said SiC semiconductor layer; (b) performing etching to partiallyremove ion-implanted regions of the regions which serve as saidimpurities implantation region and said mark region, with said singlemask, to form recesses; and (c) positioning another mask based on therecess of the region which serves as said impurities implantation regionor said mark region, and performing well implantation in a regioncontaining said impurities implantation region.
 3. A method ofmanufacturing an SiC semiconductor device, comprising the steps of: (a)etching regions of said SiC semiconductor layer which serve as animpurities implantation region and a mark region, with a single maskhaving a low selectivity relative to an SiC semiconductor layer, to formrecesses; (b) performing ion-implantation in the recesses of the regionswhich serve as said impurities implantation region and said mark regionwith the single mask; and (c) positioning another mask based on therecess of the region which serves as said impurities implantation regionor said mark region, and performing well implantation in a regioncontaining said impurities implantation region.
 4. The method ofmanufacturing an SiC semiconductor device according to claim 3, whereinsaid step (b) is a step of performing ion-implantation at least from anoblique direction relative to a surface of said SiC semiconductor layer.5. A method of manufacturing an SiC semiconductor device, comprising thesteps of: (a) performing ion-implantation in regions of an SiCsemiconductor layer which serve as an impurities implantation region anda mark region with a single mask having a tapered-shaped opening; (b)performing etching to partially remove ion-implanted regions of theregions which serve as said impurities implantation region and said markregion, with said single mask, to form recesses; and (c) positioninganother mask based on the recess of the region which serves as saidimpurities implantation region or said mark region, and performing wellimplantation in a region containing said impurities implantation region.6. The method of manufacturing an SiC semiconductor device according toclaim 5, wherein said step (a) is a step of performing ion-implantationat least from an oblique direction relative to a surface of said SiCsemiconductor layer.